Etch-assist Bas-relief
化学蚀刻辅助半浮雕工艺
标签：蚀刻浮雕, 减材, 半浮雕, 混合工艺
对 0.8–1.2 mm 铜板先感光转印图案，FeCl3 蚀刻 0.15–0.25 mm 形成凹版底纹，再从背面锤起主体轮廓——减材细节与锻起体积结合，浮雕层次比纯手工多 2–3 级。背面起凸时正面蚀刻凹线成为天然「骨架」防止板面扭曲。适合铭牌、细密纹样装饰件；蚀刻区与锤起区交界需留 2 mm 平滑过渡带避免应力撕裂。
Photo-transfer a pattern onto 0.8–1.2 mm copper, etch 0.15–0.25 mm with FeCl3 for a recessed ground, then raise the main volumes from the back—etched detail plus raised relief yields 2–3 more levels than handwork alone. The etched lines act as a "skeleton" keeping the sheet flat during back-raising. Great for plaques and intricate ornament; leave a 2 mm smooth band between etched and raised zones to prevent tearing. ---